Method and apparatus for mitigating contamination

ABSTRACT

An extreme ultra violet (EUV) lithography method includes receiving an EUV light by a scanner from an EUV light source, the EUV light passing through an intermediate focus disposed in the scanner and at a junction of the EUV light source and the scanner; directing the EUV light by the scanner to a reticle in the scanner; and deflecting nanoparticles from the EUV light source away from the reticle by generating a gas flow using a gas jet disposed entirely in the scanner and proximate to an interface of the scanner and the intermediate focus such that the gas jet does not block the EUV light.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. patent application Ser. No.17/460,121 filed on Aug. 27, 2021, entitled “Method and Apparatus forMitigating Contamination,” the entire disclosure of which isincorporated herein by reference.

BACKGROUND

One growing technique for semiconductor manufacturing is extremeultraviolet (EUV) lithography. EUV employs scanners using light in theEUV spectrum of electromagnetic radiation, including wavelengths fromabout one nanometer (nm) to about one hundred nm. Many EUV scannersstill utilize projection printing, similar to various earlier opticalscanners, except EUV scanners accomplish it with reflective rather thanrefractive optics, that is, with mirrors instead of lenses.

EUV lithography employs a laser-produced plasma (LPP), which emits EUVlight. The LPP is produced by focusing a high-power laser beam, from acarbon dioxide (CO2) laser and the like, onto small fuel droplet targetsof tin (Sn) in order to transition it into a highly-ionized plasmastate. This LPP emits EUV light with a peak maximum emission of about13.5 nm or smaller. The EUV light is then collected by a collector andreflected by optics towards a lithography exposure object, such as asemiconductor wafer. Tin debris is generated in the process, whichdebris can adversely affect the performance and efficiency of the EUVapparatus.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1A is a diagram of a lithography apparatus in accordance with someembodiments.

FIG. 1B and FIG. 1C are diagrams of laser and optics components inaccordance with some embodiments.

FIG. 2A is a diagram of a gas jet disposed in a first orientation inaccordance with some embodiments.

FIG. 2B is a diagram of a gas jet disposed in a second orientation inaccordance with some embodiments.

FIG. 3A is an external view of a gas jet in accordance with someembodiments.

FIG. 3B is a diagram of internal components of a gas jet in accordancewith some embodiments.

FIG. 4A is a diagram of external components used in conjunction with agas jet in accordance with some embodiments.

FIG. 4B is a graph of a gas profile for a gas flow in accordance withsome embodiments.

FIG. 5A and FIG. 5B are diagrams of a controller in accordance with someembodiments.

FIG. 6 is a flowchart depicting a nanoparticle mitigation process inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus/device may be otherwise oriented (rotated 90degrees or at other orientations) and the spatially relative descriptorsused herein may likewise be interpreted accordingly. In addition, theterm “made of” may mean either “comprising” or “consisting of.” In thepresent disclosure, a phrase “one of A, B and C” means “A, B and/or C”(A, B, C, A and B, A and C, B and C, or A, B and C), and does not meanone element from A, one element from B and one element from C, unlessotherwise described.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, the term “optic” is meant to be broadly construed toinclude, and not necessarily be limited to, one or more components whichreflect and/or transmit and/or operate on incident light, and includes,but is not limited to, one or more lenses, windows, filters, wedges,prisms, grisms, gratings, transmission fibers, etalons, diffusers,homogenizers, detectors and other instrument components, apertures,axicons and mirrors including multilayer mirrors, near-normal incidencemirrors, grazing incidence mirrors, specular reflectors, diffusereflectors and combinations thereof. Moreover, unless otherwisespecified, the term “optic,” as used herein, is not meant to be limitedto components which operate solely within one or more specificwavelength range(s) such as at the EUV output light wavelength, theirradiation laser wavelength, a wavelength suitable for metrology or anyother specific wavelength.

In the present disclosure, the terms mask, photomask, and reticle areused interchangeably. In the present embodiment, the mask is areflective mask. One embodiment of the mask includes a substrate with asuitable material, such as a low thermal expansion material or fusedquartz. In various examples, the material includes TiO2 doped SiO2, orother suitable materials with low thermal expansion. The mask includesmultiple reflective layers (ML) deposited on the substrate. The multiplelayers include a plurality of film pairs, such as molybdenum-silicon(Mo/Si) film pairs (e.g., a layer of molybdenum above or below a layerof silicon in each film pair). Alternatively, the multiple layers mayinclude molybdenum-beryllium (Mo/Be) film pairs, or other suitablematerials that are configurable to highly reflect the EUV light. Themask may further include a capping layer, such as ruthenium (Ru),disposed on the ML for protection. The mask further includes anabsorption layer, such as a tantalum boron nitride (TaBN) layer,deposited over the multiple layers. The absorption layer is patterned todefine a layer of an integrated circuit (IC). Alternatively, anotherreflective layer may be deposited over the multiple layers and ispatterned to define a layer of an integrated circuit, thereby forming anEUV phase shift mask.

In the present embodiments, the semiconductor substrate is asemiconductor wafer, such as a silicon wafer or other type of wafer tobe patterned. The semiconductor substrate is coated with a resist layersensitive to the EUV light in the present embodiment. Various componentsincluding those described above are integrated together and are operableto perform various lithography exposing processes. The lithographysystem may further include other modules or be integrated with (or becoupled with) other modules.

A lithography system is essentially a light projection system. Light isprojected through a ‘mask’ or ‘reticle’ that constitutes a blueprint ofthe pattern that will be printed on a workpiece. The blueprint is fourtimes larger than the intended pattern on the wafer or chip. With thepattern encoded in the light, the system's optics shrink and focus thepattern onto a silicon wafer coated with a photoresist. After thepattern is printed, the system moves the wafer slightly and makesanother copy on the wafer. This process is repeated until the wafer iscovered in patterns, completing one layer of the eventual semiconductordevice. To make an entire microchip, this process will be repeated onehundred times or more, laying patterns on top of patterns. The size ofthe features to be printed varies depending on the layer, which meansthat different types of lithography systems are used for differentlayers, from the latest-generation EUV systems for the smallest featuresto older deep ultraviolet (DUV) systems for the largest.

FIG. 1A is a schematic and diagrammatic view of an EUV lithographysystem 10. The EUV lithography system 10 includes an EUV radiationsource apparatus 100 (sometimes referred to herein as a “source side” inreference to it or one or more of its relevant parts) to generate EUVlight, an exposure tool 300, such as a scanner, and an excitation lasersource apparatus 200. As shown in FIG. 1A, in some embodiments, the EUVradiation source apparatus 100 and the exposure tool 300 are installedon a main floor (MF) of a clean room, while the excitation laser sourceapparatus 200 is installed in a base floor (BF) located under the mainfloor. Each of the EUV radiation source apparatus 100 and the exposuretool 300 are placed over pedestal plates PP1 and PP2 via dampers DP1 andDP2, respectively. The EUV radiation source apparatus 100 and theexposure tool 300 are coupled to each other by a coupling mechanism,which may include a focusing unit (not shown).

The EUV lithography system 10 is designed to expose a resist layer toEUV light (or EUV radiation). The resist layer is a material sensitiveto the EUV light. The EUV lithography system 10 employs the EUVradiation source apparatus 100 to generate EUV light having a wavelengthranging between about 1 nanometer (nm) and about 100 nm. In oneparticular example, the EUV radiation source apparatus 100 generates EUVlight with a wavelength centered at about 13.5 nm. In variousembodiments, the EUV radiation source apparatus 100 utilizes LPP togenerate the EUV radiation.

As shown in FIG. 1A, the EUV radiation source apparatus 100 includes atarget droplet generator 115 and an LPP collector 110, enclosed by achamber 105. The target droplet generator 115 generates a plurality oftarget droplets 116. In some embodiments, the target droplets 116 aretin (Sn) droplets. In some embodiments, the target droplets 116 have adiameter of about 30 microns (μm). In some embodiments, the targetdroplets 116 are generated at a rate about fifty droplets per second andare introduced into an excitation zone 106 at a speed of about seventymeters per second (m/s or mps). Other material can also be used for thetarget droplets 116, for example, a liquid material such as a eutecticalloy containing Sn and lithium (Li).

As the target droplets 116 move through the excitation zone 106,pre-pulses (not shown) of the laser light first heat the target droplets116 and transform them into lower-density target plumes. Then, the mainpulse 232 of laser light is directed through windows or lenses (notshown) into the excitation zone 106 to transform the target plumes intoan LLP. The windows or lenses are composed of a suitable materialsubstantially transparent to the pre-pulses and the main pulse 232 ofthe laser. The generation of the pre-pulses and the main pulse 232 issynchronized with the generation of the target droplets 116. In variousembodiments, the pre-heat laser pulses have a spot size about 100 μm orless, and the main laser pulses have a spot size about 200-300 μm. Adelay between the pre-pulse and the main pulse 232 is controlled toallow the target plume to form and to expand to an optimal size andgeometry. When the main pulse 232 heats the target plume, ahigh-temperature LPP is generated. The LPP emits EUV radiation, which iscollected by one or more mirrors of the LPP collector 110. Moreparticularly, the LPP collector 110 has a reflection surface thatreflects and focuses the EUV radiation for the lithography exposingprocesses. In some embodiments, a droplet catcher 120 is installedopposite the target droplet generator 115. The droplet catcher 120 isused for catching excess target droplets 116 for example, when one ormore target droplets 116 are purposely or otherwise missed by thepre-pulses or main pulse 232.

The LPP collector 110 includes a proper coating material and shape tofunction as a mirror for EUV collection, reflection, and focusing. Insome embodiments, the LPP collector 110 is designed to have anellipsoidal geometry. In some embodiments, the coating material of thecollector 110 is similar to the reflective multilayer of an EUV mask. Insome examples, the coating material of the LPP collector 110 includesmultiple layers, such as a plurality of molybdenum/silicon (Mo/Si) filmpairs, and may further include a capping layer (such as ruthenium (Ru))coated on the multiple layers to substantially reflect the EUV light.

The main pulse 232 is generated by the excitation laser source apparatus200. In some embodiments, the excitation laser source apparatus 200includes a pre-heat laser and a main laser. The pre-heat laser generatesthe pre-pulse that is used to heat or pre-heat the target droplet 116 inorder to create a low-density target plume, which is subsequently heated(or reheated) by the main pulse 232, thereby generating increasedemission of EUV light.

The excitation laser source apparatus 200 may include a laser generator210, laser guide optics 220 and a focusing apparatus 230. In someembodiments, the laser generator 210 includes a carbon dioxide (CO2)laser source or a neodymium-doped yttrium aluminum garnet (Nd:YAG) lasersource. The laser light 231 generated by the laser generator 210 isguided by the laser guide optics 220 and focused into the main pulse 232of the excitation laser by the focusing apparatus 230, and thenintroduced into the EUV radiation source apparatus 100 through one ormore apertures, such as the aforementioned windows or lenses.

In such an EUV radiation source apparatus 100, the LPP generated by themain pulse 232 creates physical debris, such as ions, gases and atoms ofthe droplet 116, along with the desired EUV light. In operation of thelithography system 10, there is an accumulation of such debris on theLPP collector 110, and such physical debris exits the chamber 105 andenters the exposure tool 300 (scanner side) as well as the excitationlaser source apparatus 200.

In various embodiments, a buffer gas is supplied from a first buffer gassupply 130 through the aperture in the LPP collector 110 by which themain pulse 232 of laser light is delivered to the tin droplets 116. Insome embodiments, the buffer gas is hydrogen (H2), helium (He), argon(Ar), nitrogen (N2), or another inert gas. In certain embodiments, H2 isused, since H radicals generated by ionization of the buffer gas canalso be used for cleaning purposes. The buffer gas can also be providedthrough one or more second buffer gas supplies 135 toward the LPPcollector 110 and/or around the edges of the LPP collector 110. Further,and as described in more detail later below, the chamber 105 includesone or more gas outlets 140 so that the buffer gas is exhausted outsidethe chamber 105.

Hydrogen gas has low absorption of the EUV radiation. Hydrogen gasreaching to the coating surface of the LPP collector 110 reactschemically with a metal of the target droplet 116, thus forming ahydride, e.g., metal hydride. When Sn is used as the target droplet 116,stannane (SnH4), which is a gaseous byproduct of the EUV generationprocess, is formed. The gaseous SnH4 is then pumped out through theoutlet 140. However, it is difficult to exhaust all gaseous SnH4 fromthe chamber and to prevent the Sn debris and SnH4 from entering theexposure tool 300 and the excitation laser source apparatus 200. To trapthe Sn, SnH4 or other debris, one or more debris collection mechanismsor devices 150 are employed in the chamber 105. In various embodiments,a controller 500 controls the EUV lithography system 10 and/or one ormore of its components shown in and described above with respect to FIG.1A.

As shown in FIG. 1B, the exposure tool 300 (sometimes referred to hereinas the “scanner side” in reference to it or one or more of its relevantparts) includes various reflective optic components, such asconvex/concave/flat mirrors, a mask holding mechanism 310 including amask stage (i.e., a reticle stage), and wafer holding mechanism 320(i.e., a wafer stage). The EUV radiation generated by the EUV radiationsource apparatus 100 and focused at intermediate focus 160 is guided bythe reflective optical components 305 onto a mask (not shown) secured onthe reticle stage 310, also referenced as a mask stage herein. In someembodiments, the distance from the intermediate focus 160 and thereticle disposed in the scanner side is approximately 2 meters. In someembodiments, the reticle size is approximately 152 mm by 152 mm. In someembodiments, the reticle stage 310 includes an electrostatic chuck, or‘e-chuck,’ (not shown) to secure the mask. The EUV light patterned bythe mask is used to process a wafer supported on wafer stage 320.Because gas molecules absorb EUV light, the chambers and areas of thelithography system 10 used for EUV lithography patterning are maintainedin a vacuum or a low-pressure environment to avoid EUV intensity loss.In various embodiments, the controller 500 controls one or more of thecomponents of the EUV lithography system 10 as shown in and describedwith respect to FIG. 1B.

FIG. 1C shows further detail of the chamber 105 of the EUV radiationsource apparatus 100, in which the relation of the LPP collector 110,the buffer gas supply 130, the second buffer gas supply 135, the gasoutlet ports 140 and the intermediate focus 160 are illustrated. Themain pulse 232 of the laser light is directed through the LPP collector110 to the excitation zone 106 where it irradiates a target plume toform an LPP. The LPP emits EUV light that is collected by the LPPcollector 110 and then directed through the intermediate focus 160toward the exposure tool 300 for use in patterning a wafer as describedpreviously. In various embodiments, the controller 500 controls one ormore of the components of the EUV lithography system 10 as shown in anddescribed with respect to FIG. 1C.

In various embodiments of the EUV lithography system 10, pressure in thesource side is higher than pressure in the scanner side. This is becausethe source side uses hydrogen gas to force the removal of airborne Sndebris therefrom, while the scanner side is maintained in near vacuum inorder to avoid diminishing strength of the EUV light (being absorbed byair molecules) or interfering with the semiconductor manufacturingoperations performed therein. In various embodiments, the intermediatefocus 160 is disposed at a junction point or intersection of the sourceside and the scanner side. As EUV light or radiation is generated, atleast 50% of the mass of each tin droplet used to form the LPP does notvaporize, but instead becomes numerous tin nanoparticles ranging indiameter from 30 nm to 100 nm. Detrimentally, the nanoparticles alsoflow from the source side to scanner side through the intermediate focus160 in the same general direction as the light generated by the sourceside. Due to the pressure differential between the source side and thescanner side, these nanoparticles attain high momenta. The momenta ofthe Sn nanoparticles entering the intermediate focus 160 are very large.With speeds and velocities of 100 m/s or more, such nanoparticles attainnominal momenta of approximately 3.67*10⁻¹⁶ m*kg/s. In some embodiments,nanoparticles that migrate to the scanner side due to the pressuredifference fall on the reticle and wafer, thereby detrimentally leadingto a higher incidence of defects in the semiconductor manufacturingoperations performed by the lithography apparatus 10.

It has been observed that there is not sufficient time to deflect Snnanoparticles by using an electromagnetic (EM) field or the like alone.This is due to the short period of time between nanoparticle debrisgeneration and arrival of the nanoparticles at the intermediate focus160. The strength of any EM field must also be limited so that it doesnot interfere with the operation of other components of the lithographyapparatus 10, which makes it ineffective alone against nanoparticle witha high momentum. However, the inventors of the present disclosure havefound that tin nanoparticles can be prevented from flying onto thereticle by using high-density and high velocity gas flow to deflect suchnanoparticles, either alone or in combination with a low level EM fieldin various embodiments.

FIG. 2A is a diagram of a gas jet 170 disposed in a first orientation ator near the intermediate focus 160 in accordance with some embodiments.In some embodiments, the gas jet 170 is a supersonic gas jet, whichproduces a gas flow 180 having velocities that can exceed supersonicvelocities of 383 m/s. In some embodiments, the speed of the gas flow180 is substantially between 300 m/s and 1200 m/s. In some embodiments,the speed of the gas flow 180 is maintained at approximately 800-1000m/s. In some embodiments, the velocity of the gas flow 180 is fixed. Inother embodiments, the velocity of the gas flow 180 is adjustable by thecontroller 500 or manually by an adjustment mechanism 480. In someembodiments, the adjustment mechanism 480 is a knob, such as a tuningknob, which may be manually turned or set to a desired position. In someembodiments, a motor (not shown) responds to the adjustment mechanism480 or the controller 500 to adjust the velocity of the gas jet 170accordingly.

As shown in FIG. 2A, nanoparticles 400 generated by the source sideenter the intermediate focus 160 before impinging on the scanner sideand, in various embodiments, flow in the same general direction, onaverage, as the general direction of the light generated by the sourceside, which is directed through the intermediate focus 160 toward thescanner side. In some embodiments, the gas jet 170 is disposed so thatit does not block the light entering the scanner side. In variousembodiments, the gas jet 170 is positioned such that the gas flow 180 isproximate to the intersection of the scanner side and the intermediatefocus 160 in order to deflect nanoparticles 400 that enter the scannerside from the intermediate focus. In various embodiments, the gas jet isoriented such that the gas flow 180 is substantially perpendicular(i.e., 90±2 degrees from) the direction of the flow of the light and thenanoparticles 400 exiting the intermediate focus 160. In someembodiments, this orientation of the gas jet 170 is fixed. In otherembodiments, this orientation is adjustable by up to 20 degrees in twodirections, such that the gas flow 180 may be adjusted between 70degrees and 110 degrees of the direction of the flow of the light andthe nanoparticles 400.

In embodiments where the orientation of the gas jet 170 is perpendicularto the direction of the flow, the nanoparticles 400 may be deflected upto approximately 76 degrees from the direction of the flow. In variousembodiments, the nanoparticles 400 are allowed to enter the scanner sidebut are immediately deflected away from the reticle disposed therein bythe gas flow 180. In various embodiments, the nanoparticles 400 aredeflected towards a debris collector 190. In some embodiments, thedebris collector 190 comprises a port, a filter and a container, or thelike to collect and hold the nanoparticle debris. In some embodiments,the debris collector 190 includes a vacuum chamber (not shown) forattracting the nanoparticles 400 into an interior of the debriscollector 190. In some embodiments, the debris collector 190 is disposedentirely within the scanner side.

FIG. 2B is a diagram of a gas jet disposed in a second orientation inaccordance with some embodiments. In some embodiments, the gas jet 170has a fixed orientation of approximately 120 degrees (e.g., 120±5degrees) from the direction of the flow of the nanoparticles 400. Insuch embodiments, the nanoparticles 400 may be deflected atapproximately 105 degrees from the direction of the flow, i.e. backtoward the source side. In other embodiments, this orientation isadjustable by up to 20 degrees in two directions, such that the gas flow180 may be adjusted between 100 degrees and 140 degrees of the directionof the flow of the light and the nanoparticles 400. In some embodiments,this orientation prevents the nanoparticles 400 which have entered theintermediate focus 160 from crossing into the scanner side. In someembodiments, the nanoparticles 400 are deflected toward a debriscollector 190 disposed in the source side proximate to the intermediatefocus 160. In some embodiments, the outlets 140 act as the debriscollector 190. In some embodiments, the nanoparticles 400 are deflectedtoward the debris collection mechanisms or devices 150 in the sourceside. In some embodiments, the gas jet 170 is disposed entirely in thescanner side, but is positioned such that at least a portion of the gasflow 180 is disposed within the intermediate focus 160. In someembodiments, the entirety of the gas flow 180 is disposed within theintermediate focus 160. In various embodiments, the orientation of thegas jet 170 may be changed between approximately 100 degrees to 140degrees from the direction of the flow of the nanoparticles 400 enteringthe intermediate focus 160. In such embodiments, the orientation of thegas jet 170 may be adjusted by the adjustment mechanism 480 or thecontroller 500.

FIG. 3A is an external view of a gas jet 170 in accordance with someembodiments. In various embodiments, the gas jet 170 is approximately 14centimeters (cm) in length. In some embodiments, the gas jet 170includes a nozzle 175 for generating the gas flow 180. In someembodiments, the nozzle 175 has a single opening for directing the gasflow 180. In some embodiments, the nozzle 175 includes multiple nozzles.In some embodiments, the nozzle 175 includes two or more gas jets 170.In some embodiments, the two or more gas jets 170 are arranged inseries.

FIG. 3B is a diagram of internal components of a gas jet 170 inaccordance with some embodiments. In some embodiments, the gas jet 170is an ultrafast gas valve. In various embodiments, the gas jet 170operates by driving a fast, high current (i.e., 1 kiloamp (kA)) pulseinto an electromagnetic coil. An aluminum flyer plate 172 is pressedagainst this coil and is repelled by the eddy current induced in it. Theflyer plate 172 is backed by a coil spring 171. The motion of the flyerplate 172 is comparable to a pendulum that is excited by the pulse. Invarious embodiments, the flyer plate 172 moves back 1 mm in 100 μs, thenreturns to its seat in 600 μs. In some embodiments, the flyer plate 172has a long stub that seals against the valve face, to which the nozzle175 is attached. This stub minimizes the volume between the valve seat174 and the throat of nozzle 175, which allows fast rise time of the gasfrom the nozzle 175. FIG. 3B shows a cross-section view and photographof the gas jet 170. The flyer plate 172 backed by a coil spring 174 andpressed up against the spiral wound coil 173. In various embodiments,the 25 mm diameter spiral coil 173 is wound from a 3 mm wide copperstrip and insulated by a thin Kapton strip. In various embodiments, theflyer plate 172 has a long hollow snout that seals against a 4 mmdiameter O-ring (not shown) close to the base of the nozzle 175. In someembodiments, the snout is made hollow to minimize the mass of the flyerplate 172. In various embodiments, a charge voltage of 350 V, a currentof 2 kA with a 140 μs half period in the (magnetic field strength=6H)coil imparts a 0.07 newton-second (Ns) impulse to the 9 gram (g)aluminum flyer plate 172 in order to produce the supersonic gas flow180.

In various embodiments, the gas jet 170 is coupled to a suitablesupersonic nozzle 175 to create a well-defined gas flow 180. In someembodiments, two types of supersonic Laval nozzles are available to becoupled to the gas jet 170 to produce a suitable gas flow 180. The firstdesign is a “method of characteristics” design, in which hyperbolicequations are solved to give a shock-free contour everywhere along theinternal expansion of the nozzle 175. The second design is a “straight”nozzle, in which the supersonic section is a simple conical expansionfrom the throat to the exit of the nozzle 175. The straight nozzledesign is easier to manufacture and is used in various embodiments.

FIG. 4A is a diagram of external components operating the gas jet 170 inaccordance with some embodiments. The nozzle 175, gas flow 180,adjustment mechanism 480, and controller 500 operate in the mannerspreviously described. A backing pressure supply 440 provides a gas foruse by the gas jet 170 to create the gas flow 180 in variousembodiments. A variety of gases may be supplied by the backing pressuresupply 440 to produce the gas flow 180, such as H2, N2, He, Ar oranother inert gas. In various embodiments H2 is used since it absorbsthe least amount of EUV light, and thus absorbs the least light used bythe semiconductor manufacturing operations performed in the scanner sideof the lithography apparatus 10. Advantageously, H2 is already suppliedto other components of the system 10, such as the source side, so thatno major modifications need to be made to accommodate the gas jet 170using hydrogen.

In various embodiments, the dimensions of the gas flow 180 are 10 mm inlength by 1 mm in width by 3 mm in height from the nozzle 175. In someembodiments, the dimensions of the gas flow 180 are fixed. In otherembodiments, one or more of the dimensions of the gas flow areadjustable. In some embodiments, the controller 500 adjusts the size ofone or more dimensions of the gas flow 180. In some embodiments, theadjustment mechanism 480 is used to manually adjust one or moredimensions of the gas flow 180. In some embodiments, the length of gasflow 180 generated by the nozzle 175 which is of sufficient density todeflect the nanoparticle debris is between about 1 mm and about 20 mm.In some embodiments, the width of the gas flow 180 is between about 1 mmand about 5 mm. In some embodiments, the height of the gas flow 180 isbetween about 1 mm and about 10 mm. In various embodiments, theadjustment mechanism 480 or the controller 500 may be used to change oneor more additional characteristics of the gas flow 180, such as thedensity of the gas flow 180, a backing pressure of the gas supplied bythe backing pressure supply 440 and a temperature of the gas flow 180.

FIG. 4B is a graph 450 displaying profile characteristics for the gasflow 180 produced by the gas jet 170 in accordance with someembodiments. In order to provide sufficient deflective force to counterthe flow and momentum of nanoparticles 400, it has been determined thata large molecular gas density of between 10⁻¹⁸ and 10⁻²¹ g/cm³ is usefulto deflect nearly all tin debris generated on the source side, therebypreventing defects in the semiconductor manufacturing process performedin the scanner side by the lithography system 10. In some embodiments,the gas density along the length of the nozzle 175 is maintained betweensubstantially 1.2 and 1.7×10⁻¹⁹ g/cm³, as shown in the graph 450. Atthis gas density, Sn nanoparticle deflection momentum from H2-Sncollisions is large enough to provide nearly 100% nanoparticledeflection so long as Sn momentum is no greater than 3.42×10⁻¹⁴ kgm/s.Deflection of Sn nanoparticles 400 using a high density hydrogenmolecular gas flow 180 maintains acceptable defect control in highvolume manufacturing using the EUV lithography apparatus 10 according tosome embodiments. Hydrogen gas can be vented easily without perturbationto semiconductor manufacturing operations due to low interference withthe EUV light generated by the apparatus 10, and because H2 gas isalready used by the source side in various embodiments.

FIG. 5A and FIG. 5B illustrate a computer system 500 for controlling thesystem 10 and its components in accordance with various embodiments ofthe present disclosure. FIG. 5A is a schematic view of a computer system500 that controls the system 10 of FIG. 1A. In some embodiments, thecomputer system 500 is programmed to initiate a process for monitoringcontamination levels of chamber components, wafer holding tools orairborne contamination arising from the same and provide an alert thatcleaning is required. In some embodiments, manufacturing ofsemiconductor devices is halted in response to such an alarm. As shownin FIG. 5A, the computer system 500 is provided with a computer 501including an optical disk read only memory (e.g., CD-ROM or DVD-ROM)drive 505 and a magnetic disk drive 506, a keyboard 502, a mouse 503 (orother similar input device), and a monitor 504.

FIG. 5B is a diagram showing an internal configuration of the computersystem 500. In FIG. 5B, the computer 501 is provided with, in additionto the optical disk drive 505 and the magnetic disk drive 506, one ormore processors 511, such as a micro-processor unit (MPU) or a centralprocessing unit (CPU); a read-only memory (ROM) 512 in which a programsuch as a boot up program is stored; a random access memory (RAM) 513that is connected to the processors 511 and in which a command of anapplication program is temporarily stored, and a temporary electronicstorage area is provided; a hard disk 514 in which an applicationprogram, an operating system program, and data are stored; and a datacommunication bus 515 that connects the processors 511, the ROM 512, andthe like. Note that the computer 501 may include a network card (notshown) for providing a connection to a computer network such as a localarea network (LAN), wide area network (WAN) or any other useful computernetwork for communicating data used by the computer system 500 and thesystem 10. In various embodiments, the controller 500 communicates viawireless or hardwired connection to the system 10 and its components.

The program for causing the computer system 500 to execute the processfor controlling the system 10 of FIG. 1A, and components thereof and/orto execute the process for the method of manufacturing a semiconductordevice according to the embodiments disclosed herein are stored in anoptical disk 521 or a magnetic disk 522, which is inserted into theoptical disk drive 505 or the magnetic disk drive 506, and transmittedto the hard disk 514. Alternatively, the program is transmitted via anetwork (not shown) to the computer system 500 and stored in the harddisk 514. At the time of execution, the program is loaded into the RAM513. The program is loaded from the optical disk 521 or the magneticdisk 522, or directly from a network in various embodiments.

The stored programs do not necessarily have to include, for example, anoperating system (OS) or a third party program to cause the computer 501to execute the methods disclosed herein. The program may only include acommand portion to call an appropriate function (module) in a controlledmode and obtain desired results in some embodiments. In variousembodiments described herein, the controller 500 is in communicationwith the lithography system 10 to control various functions thereof.

The controller 500 is coupled to the system 10 in various embodiments.The controller 500 is configured to provide control data to those systemcomponents and receive process and/or status data from those systemcomponents. For example, the controller 500 comprises a microprocessor,a memory (e.g., volatile or non-volatile memory), and a digital I/O portcapable of generating control voltages sufficient to communicate andactivate inputs to the processing system 100, as well as monitor outputsfrom the system 10. In addition, a program stored in the memory isutilized to control the aforementioned components of the lithographysystem 10 according to a process recipe. Furthermore, the controller 500is configured to analyze the process and/or status data, to compare theprocess and/or status data with target process and/or status data, andto use the comparison to change a process and/or control a systemcomponent. In addition, the controller 500 is configured to analyze theprocess and/or status data, to compare the process and/or status datawith historical process and/or status data, and to use the comparison topredict, prevent, and/or declare a fault or alarm.

FIG. 6 is a flowchart depicting a nanoparticle mitigation process 600 inaccordance with some embodiments, which in various embodiments, isperformed by the controller 500. In some embodiments, when a lithographyprocess is commenced (operation 602) by the system 10, the gas jet 170is activated (operation 604) in order to prevent tin nanoparticle debrisfrom migrating from the source side to the scanner side. In someembodiments, the nanoparticles 400 are deflected into a debris collector190 by the gas flow 180 generated by the gas jet 170 (operation 606). Insome embodiments, the gas jet 170 is positioned to be substantiallyperpendicular to the flow of nanoparticles 400 and the debris collector190 may be disposed entirely within the scanner side of the system 10.In additional embodiments, some or all of the nanoparticles 400 aredeflected back to the source side gas flow that at least partiallyenters the junction of the intermediate focus 160 and the supply side.In such embodiments, the nanoparticles 400 may be deflected to a debriscollector 190 disposed in the source side and out of the path ofgenerated light. In other embodiments, the deflected nanoparticles 400and gas from the gas flow 180 are partially or completely removedthrough exhaust ports 140 and/or debris collection mechanisms or devices150 disposed in the source side (operation 608). Once the lithographysystem 10 goes idle (operation 610), for purposes of maintenance,cleaning or whenever the semiconductor manufacturing process pauses orends, the gas jet 170 is also deactivated (operation 612) in variousembodiments.

By installing a gas jet 170 at least partially within a scanner side ofthe lithography system 10 and proximate to the intermediate focus 160,tin nanoparticle debris is deflected away from the reticle in thescanner side using pulsed high density supersonic hydrogen gas invarious embodiments. This results in superior defect performancecompared to a lithography system 10 that is not so equipped. Where thetin nanoparticles 400 have a momentum less than 3.42×10⁻¹⁴ kgm/s, nearly100% of the tin nanoparticles 400 are prevented from contaminating thescanner side. This solution is feasible because the gas jet 170 can beinstalled in-line without interfering with light generated by the sourceside, and only nominal additional electrical power and gas supply arerequired.

According to various embodiments, an extreme ultra violet (EUV)lithography method includes generating EUV light in a light source sideof an EUV lithography apparatus and deflecting the nanoparticles awayfrom the reticle by generating a gas flow using a gas jet disposed at aninterface of the scanner side and the intermediate focus. In variousembodiments, the apparatus includes the light source side and a scannerside. In various embodiments, EUV light and nanoparticles created duringthe generating EUV light pass through an intermediate focus and flow ina direction toward the scanner side and away from the light source side.In some embodiments, the gas flow is a supersonic gas flow. In someembodiments, an orientation of the gas jet is adjusted with respect tothe gas flow in order to maximize deflection of the nanoparticles. Insome embodiments, the gas jet is adjusted using a controller. In someembodiments, the nozzle is positioned at a fixed orientation that issubstantially perpendicular to the direction away from the light source.In some embodiments, the orientation of the nozzle is between 70 degreesand 110 degrees from the direction away from the light source. In someembodiments, the nozzle is positioned at a fixed orientation that issubstantially 120 degrees from the direction away from the light source.In some embodiments, the orientation of the nozzle is between 100degrees and 140 degrees of the direction away from the light source. Insome embodiments, a length of the gas flow generated by the gas jet isbetween one and twenty millimeters at the intermediate focus. In someembodiments, a width of the gas flow generated by the gas jet is betweenone and five millimeters at the intermediate focus. In some embodiments,a height of the gas flow generated by the gas jet is between one and tenmillimeters at the intermediate focus. In some embodiments, the methodfurther includes collecting the nanoparticles deflected by the gas jetusing a debris collector. In some embodiments, the gas jet is disposedin the scanner side proximate to the interface such that it does notblock the light.

According to various embodiments, an apparatus has a source side thatgenerates light and nanoparticle debris, a scanner side that receivesthe light and directs the light to a reticle, an intermediate focusdisposed at a junction of the source side and the scanner side, and agas jet disposed between the intermediate focus and the reticle. Invarious embodiments, the gas jet generates a gas flow to deflect thenanoparticle debris. In some embodiments, the gas jet is disposedproximate to the intermediate focus and the gas flow occurs only in thescanner side. In some embodiments, the gas jet is disposed proximate tothe intermediate focus and the gas flow at least partially occurs withinthe intermediate focus. In some embodiments, the gas flow is adjustablebetween a speed of 300 and 1200 m/s.

According to various embodiments, a method includes generating a LPP andnanoparticles in a source side, directing light from the LPP to anintermediate focus, generating a gas flow using a gas jet proximate tothe intermediate focus, and deflecting nanoparticles that enter theintermediate focus using the gas flow. In some embodiments, a debriscollector is disposed in the source side. In some embodiments, the gasflow is generated using a hydrogen gas. In some embodiments, the gasflow has a fixed or adjustable velocity between 300 and 1200 m/s.

The foregoing outlines features of several embodiments or examples sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodiments orexamples introduced herein. Those skilled in the art should also realizethat such equivalent constructions do not depart from the spirit andscope of the present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. An extreme ultra violet (EUV) lithography method,comprising: receiving an EUV light by a scanner from an EUV lightsource, the EUV light passing through an intermediate focus disposed inthe scanner and at a junction of the EUV light source and the scanner;directing the EUV light by the scanner to a reticle in the scanner; anddeflecting nanoparticles from the EUV light source away from the reticleby generating a gas flow using a gas jet disposed entirely in thescanner and proximate to an interface of the scanner and theintermediate focus such that the gas jet does not block the EUV light.2. The method of claim 1, wherein the gas flow is a supersonic gas flow.3. The method of claim 1, further comprising adjusting an orientation ofthe gas jet with respect to the gas flow in order to maximize deflectionof the nanoparticles.
 4. The method of claim 3, wherein the orientationof the gas jet is adjusted using a controller.
 5. The method of claim 1,wherein a nozzle is positioned at an orientation substantiallyperpendicular to a direction of the EUV light away from the EUV lightsource.
 6. The method of claim 5, wherein the orientation of the nozzleis between 70 degrees and 110 degrees from the direction.
 7. The methodof claim 1, wherein a nozzle is positioned at an orientationsubstantially 120 degrees from a direction of the EUV light away fromthe EUV light source.
 8. The method of claim 7, wherein the orientationof the nozzle is between 100 degrees and 140 degrees from the direction.9. The method of claim 1, wherein a length of the gas flow generated bythe gas jet is between one and twenty millimeters at the intermediatefocus.
 10. The method of claim 1, wherein a width of the gas flowgenerated by the gas jet is between one and five millimeters at theintermediate focus.
 11. The method of claim 1, wherein a height of thegas flow generated by the gas jet is between one and ten millimeters atthe intermediate focus.
 12. The method of claim 1, further comprisingcollecting the nanoparticles deflected by the gas jet using a debriscollector.
 13. An apparatus for an extreme ultra violet (EUV)lithography, comprising: a scanner including a reticle, wherein thescanner is configured to receive an EUV radiation from an EUV radiationsource and to direct the EUV radiation to the reticle, and wherein anintermediate focus is disposed entirely in the EUV radiation source andat a junction of the EUV radiation source and the scanner; and a gas jetdisposed entirely in the scanner and adjacent to the junction of the EUVradiation source and the scanner, wherein the gas jet generates a gasflow to deflect nanoparticle debris coming from the EUV radiation sourceaway from the reticle.
 14. The apparatus of claim 13, further comprisinga debris catcher to catch the deflected nanoparticle debris.
 15. Theapparatus of claim 13, wherein the gas jet is disposed adjacent to theintermediate focus.
 16. The apparatus of claim 13, further comprising anadjustment mechanism configured to adjust a velocity of the gas flowbetween 300 and 1200 meters per second.
 17. A method, comprising:receiving an EUV radiation by a scanner from an EUV radiation source;directing the EUV radiation by the scanner to an intermediate focusdisposed at a junction of the EUV radiation source and the scanner; andgenerating a gas flow using a gas jet, wherein the gas jet is entirelydisposed in the scanner and proximate to the intermediate focus suchthat the gas jet deflects nanoparticles entering the intermediate focusfrom the EUV radiation source and does not block the EUV radiation. 18.The method of claim 17, further comprising deflecting the nanoparticlestoward a debris collection device disposed in the EUV radiation source.19. The method of claim 17, wherein the gas flow comprises a hydrogengas having a velocity between 300 and 1200 meters per second.
 20. Themethod of claim 17, further comprising adjusting an orientation of thegas jet with respect to the gas flow in order to maximize deflection ofthe nanoparticles.